High-power GaAs FET (small signal gain stage)
S to X BAND / 0.15W non - matched

DESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel  Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.

FEATURES
High linear power gain 
  Glp=8.0dB @f=8GHz
High P1dB
  P1dB=21.8dBm(TYP.) @f=8GHz

APPLICATION
S to X Band medium-power amplifiers and oscillators