DESCRIPTION
The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
● High output power
Po=36.5dBm(TYP.) @f=1.9GHz,Pin=23dBm
● High power gain
Gp=14.5dB(TYP.) @f=1.9GHz
● High power added efficiency
add=50%(TYP.) @f=1.9GHz,Pin=23dBm
● Hermetic Package
APPLICATION
● For UHF Band power amplifiers