MGF0916A 데이터시트 - Mitsumi
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MGF0916A
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Mitsumi
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
High power gain
Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
add=30%(TYP.) @f=1.9GHz,Pin=5dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
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