MGF0917A 데이터시트 - Mitsumi
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MGF0917A
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Mitsumi
L & S BAND / 0.25W SMD non - matched
DESCRIPTION
The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power
Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
• High power gain
Gp=21dB(TYP.) @f=1.9GHz
• High power added efficiency
add=38%(TYP.) @f=1.9GHz,Pin=4dBm
• Hermetic Package
APPLICATION
• For UHF Band power amplifiers
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