DESCRIPTION
The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
   
FEATURES
• Class A operation
• High output power
    P1dB=38.0dBm(TYP.) @f=2.3GHz
• High power gain
    GLP=11.0dB(TYP.) @f=2.3GHz
• High power added efficiency
    P.A.E =45%(TYP.) @f=2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid
   
APPLICATION
• For UHF Band power amplifiers