MGF0918A(2011) 데이터시트 - MITSUBISHI ELECTRIC
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MGF0918A
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MITSUBISHI ELECTRIC
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
● High output power
Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
● High power gain
Gp=20dB(TYP.) @f=1.9GHz
● High power added efficiency
add=45%(TYP.) @f=1.9GHz,Pin=8dBm
● Hermetic Package
APPLICATION
● For UHF Band power amplifiers
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