DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
High power gain
Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
add=37%(TYP.) @f=1.9GHz,Pin=12dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers