SKW30N60(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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SKW30N60
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW30N60

25V

20V

120V

1nF

480V

15V

10V

100pF

5V

Ciss

Coss

Crss

0V

0nC

50nC 100nC 150nC 200nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC = 30A)

10pF

0V

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

25µs

20µs

15µs

10µs

5µs

0µs

10V 11V 12V 13V 14V 15V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 600V, start at Tj = 25°C)

500A

450A

400A

350A

300A

250A

200A

150A

100A

50A

0A

10V 12V 14V 16V 18V 20V

VGE, GATE-EMITTER VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(VCE ≤ 600V, Tj = 150°C)

8

Rev. 2_2 Sep 08

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