SKW30N60(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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SKW30N60
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW30N60

160A

Ic

140A

120A

100A

80A

TC=80°C

60A

40A

TC=110°C

Ic

20A

0A

10Hz

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 400V,

VGE = 0/+15V, RG = 11Ω)

300W

250W

200W

150W

100W

50W

0W

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

(Tj ≤ 150°C)

100A

tp=4µs

15µs

10A

50µs

200µs

1ms

1A

DC

0.1A

1V

10V

100V

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤ 150°C)

60A

50A

Limited by bond wire

40A

30A

20A

10A

0A

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of

case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

4

Rev. 2_2 Sep 08

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