SKW30N60(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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SKW30N60
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW30N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Very soft, fast recovery anti-parallel EmCon diode

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1 for target applications

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

C

G

E

PG-TO-247-3

Type

SKW30N60

VCE

IC

VCE(sat)

Tj

Marking

Package

600V 30A

2.5V

150°C K30N60 PG-TO-247-3

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 600V, Tj ≤ 150°C

Diode forward current

TC = 25°C

TC = 100°C

Diode pulsed current, tp limited by Tjmax

Gate-emitter voltage

Short circuit withstand time2

VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Soldering temperature

wavesoldering, 1.6 mm (0.063 in.) from case for 10s

Operating junction and storage temperature

Symbol

VCE

IC

ICpuls

-

IF

IFpuls

VGE

tSC

Ptot

Ts

Tj , Tstg

Value

Unit

600

V

A

41

30

112

112

41

30

112

±20

V

10

µs

250

W

260

°C

-55...+150

°C

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Rev. 2_2 Sep 08

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