SKW30N60(2008) 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

SKW30N60
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW30N60

1000ns

td(off)

1000ns

td(off)

100ns tf

td(on)

tr

10ns

10A 20A 30A 40A 50A 60A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 11Ω,

Dynamic test circuit in Figure E)

100ns

tf

td(on)

tr

10ns

0Ω

10Ω

20Ω

30Ω

40Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 30A,

Dynamic test circuit in Figure E)

1000ns

td(off)

100ns

tf

tr

td(on)

10ns

0°C

50°C

100°C

150°C

Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 30A, RG = 11Ω,

Dynamic test circuit in Figure E)

5.5V

5.0V

4.5V

4.0V

max.

3.5V

3.0V

typ.

2.5V

min.

2.0V

-50°C 0°C

50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(IC = 0.7mA)

6

Rev. 2_2 Sep 08

Share Link: