SKW30N60(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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SKW30N60
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW30N60

60A

50A

40A

150°C

30A

100°C

20A

25°C

10A

-55°C

0A

0.0V

0.5V

1.0V

1.5V

2.0V

VF, FORWARD VOLTAGE

Figure 25. Typical diode forward current as

a function of forward voltage

2.0V

1.5V

I F = 60A

I F = 30A

1.0V

-40°C 0°C 40°C 80°C 120°C

Tj, JUNCTION TEMPERATURE

Figure 26. Typical diode forward voltage as

a function of junction temperature

100K/W

D=0.5

0.2

0.1

10-1K/W

0.05

0.02

0.01

10-2K/W

single pulse

R,(1/W)

0.270

0.231

0.221

0.203

0.070

τ, (s)

0.157

2.08*10-2

2.29*10-3

2.04*10-4

1.03*10-5

R1

R2

C1=τ1/R1 C2=τ2/R2

10-3K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse width

(D = tp / T)

10

Rev. 2_2 Sep 08

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