SKW30N60(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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SKW30N60
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW30N60

90A

80A

70A

60A

VGE=20V

15V

50A

13V

11V

40A

9V

7V

30A

5V

20A

10A

0A

0V

1V

2V

3V

4V

5V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

(Tj = 25°C)

90A

80A

70A

60A

VGE=20V

15V

50A

13V

11V

40A

9V

7V

30A

5V

20A

10A

0A

0V

1V

2V

3V

4V

5V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristics

(Tj = 150°C)

100A

90A

Tj=+25°C

80A

-55°C

+150°C

70A

60A

50A

40A

30A

20A

10A

0A

0V

2V

4V

6V

8V

10V

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristics

(VCE = 10V)

4.0V

3.5V

IC = 60A

3.0V

2.5V

IC = 30A

2.0V

1.5V

1.0V

-50°C 0°C 50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

saturation voltage as a function of junction

temperature

(VGE = 15V)

5

Rev. 2_2 Sep 08

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