SKW30N60(2008) 데이터 시트보기 (PDF) - Infineon Technologies
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SKW30N60
(Rev.:2008)
(Rev.:2008)
Infineon Technologies
SKW30N60 Datasheet PDF : 13 Pages
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SKW30N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t b
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=30A,
VGE=0/15V,
R G = 11Ω ,
Lσ1) =180nH,
Cσ1) =900pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=200V, IF=30A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
44
34
291
58
0.64
0.65
1.29
400
32
368
610
5.5
180
Unit
max.
53 ns
40
349
70
0.77 mJ
0.85
1.62
- ns
-
-
- nC
-A
- A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t b
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VCC=400V,IC=30A,
VGE=0/15V,
RG= 11Ω,
Lσ1) =180nH,
Cσ1) =900pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=200V, IF=30A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
44
34
324
67
0.98
0.92
1.90
520
56
464
1740
9.0
200
Unit
max.
53 ns
40
389
80
1.18 mJ
1.19
2.38
- ns
-
-
- nC
-A
- A/µs
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
3
Rev. 2_2 Sep 08
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