SKW30N60(2008) 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

SKW30N60
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW30N60

5.0mJ

4.5mJ

*) Eon and Ets include losses

due to diode recovery.

Ets*

4.0mJ

3.5mJ

3.0mJ

2.5mJ

Eon*

2.0mJ

Eoff

1.5mJ

1.0mJ

0.5mJ

0.0mJ

10A 20A 30A 40A 50A 60A 70A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 11Ω,

Dynamic test circuit in Figure E)

4.0mJ

3.5mJ

*) Eon and Ets include losses

due to diode recovery.

3.0mJ

2.5mJ

Ets*

2.0mJ

1.5mJ

Eoff

1.0mJ

Eon*

0.5mJ

0.0mJ

0Ω

10Ω

20Ω

30Ω

40Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 30A,

Dynamic test circuit in Figure E)

3.0mJ

2.5mJ

*) Eon and Ets include losses

due to diode recovery.

2.0mJ

1.5mJ

1.0mJ

0.5mJ

Ets*

Eon*

Eoff

0.0mJ

0°C

50°C

100°C

150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 30A, RG = 11Ω,

Dynamic test circuit in Figure E)

100K/W

D=0.5

0.2

10-1K/W

0.1

0.05

0.02

10-2K/W

0.01

10-3K/W

R,(1/W)

0.3681

0.0938

0.0380

R1

τ, (s)

0.0555

1.26*10-3

1.49*10-4

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10-4K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = tp / T)

7

Rev. 2_2 Sep 08

Share Link: