TJ20A10M3 데이터시트 - Toshiba
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TJ20A10M3
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Swiching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 50 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −100 V)
• Enhancement-model: Vth = −2.0 to −4.0 V (VDS = −10 V, ID = −1 mA)
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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) ( Rev : 2014 )
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