TJ20A10M3 데이터 시트보기 (PDF) - Toshiba
부품명
상세내역
일치하는 목록
TJ20A10M3 Datasheet PDF : 6 Pages
| |||
TJ20A10M3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI)
TJ20A10M3
Swiching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 50 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −100 V)
• Enhancement-model: Vth = −2.0 to −4.0 V (VDS = −10 V, ID = −1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−100
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−100
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
Pulse (Note 1)
IDP
−20
A
−40
Drain power dissipation (Tc = 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
Avalanche current
IAS
124
mJ
−20
A
1: Gate
2: Drain
3: Source
Repetitive avalanche energy (Note 3)
EAR
Channel temperature
Tch
Storage temperature range
Tstg
2.29
mJ
150
°C
−55 to 150
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −25 V, Tch = 25°C, L = 500 µH, RG = 25 Ω, IAS = −20 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Thermal Characteristics
2
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
Rth (ch−c)
Rth (ch−a)
Max
Unit
3.57
°C / W
62.5
°C / W
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
Start of commercial production
2009-03
1
2018-06-01
Share Link: 