SSM3J334R(2014) 데이터시트 - Toshiba
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SSM3J334R
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○ Power Management Switch Applications
• Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V)
RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V)
RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI) ( Rev : 2004 )
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