SSM3J16FS 데이터시트 - Toshiba
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SSM3J16FS
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High Speed Switching Applications
Analog Switch Applications
• Small package
• Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V)
: RDS(ON) = 12 Ω (max) (@VGS = −2.5 V)
: RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) ( Rev : 2014 )
Toshiba
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