TJ20A10M3 데이터 시트보기 (PDF) - Toshiba
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TJ20A10M3 Datasheet PDF : 6 Pages
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Electrical Characteristics (Ta = 25°C)
TJ20A10M3
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS VGS = ±20 V, VDS = 0 V
IDSS VDS = −100 V, VGS = 0 V
V (BR) DSS ID = −10 mA, VGS = 0 V
V (BR) DSX ID = −10 mA, VGS = 20 V
Vth
VDS = −10 V, ID = −1 mA
RDS (ON) VGS = −10 V, ID = −10 A
Yfs VDS = −10 V, ID = −10 A
Ciss
Crss
VDS = −10V, VGS = 0 V, f = 1 MHz
Coss
Min Typ. Max Unit
±100 nA
−10 µA
−100
V
−75
−2.0
−4.0
V
63
90 mΩ
25
50
S
5500
200
pF
290
tr
0V
VGS
−10 V
ton
13
ID = −10 A
VOUT
27
RL = 5 Ω
ns
tf
105
VDD ≈ −50 V
Duty ≤ 1%, tw = 10 µs
toff
420
Qg
Qgs1
Qgd
VDD ≈ −80 V, VGS = −10 V,
ID = −20 A
120
20
nC
32
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR
IDRP
VDSF
trr
Qrr
IDR = −20 A, VGS = 0 V
IDR = −20 A, VGS = 0 V,
dIDR/dt = −50 A/µs
Min Typ. Max Unit
−20
A
−40
A
1.4
V
76
ns
104
nC
Marking
J20A10M
3
Part No.
(or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product Labels
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2018-06-01
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