datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

TC58NVG0S3AFT05 데이터 시트보기 (PDF) - Toshiba

부품명
상세내역
일치하는 목록
TC58NVG0S3AFT05 Datasheet PDF : 33 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
TC58NVG0S3AFT05
(7) Status Read during a Read operation
command 00
00
[A]
30
70
CE
WE
RY/BY
RE
Address N
Status Read
command input
Status Read
Status output
Figure 18.
The device status can be read out by inputting the Status Read command “70h” in Read mode.
Once the device has been set to Status Read mode by a “70h” command, the device will not return to
Read mode.
Therefore, a Status Read during a Read operation is prohibited.
However, when the Read command “00h” is input during [A], Status mode is reset and the device returns
to Read mode. In this case, data output starts automatically from address N and address input is
unnecessary
(8) Auto programming failure
80
10
Address Data
M input
Fail
70
I/O
80
10
Address Data
N input
80
M
10
If the programming result for page address M is Fail, do not try to program the
page to address N in another block without the data input sequence.
Because the previous input data has been lost, the same input sequence of 80h
command, address and data is necessary.
N
Figure 19.
(9) RY/BY : termination for the Ready/Busy pin ( RY/BY )
A pull-up resistor needs to be used for termination because the RY / BY buffer consists of an open drain
circuit.
VCC
VCC
R
Ready
3.0 V VCC
3.0 V
Device
RY/BY
1.0 V
Busy
1.0 V
CL
tf
tr
VSS
This data may vary from device to device.
We recommend that you use this data as a
reference when selecting a resistor value.
1.5 µs
tr 1.0 µs
0.5 µs
0
Figure 19.
tf
tr
VCC = 3.3 V
Ta = 25°C
15 ns
CL = 100 pF
10 ns tf
5 ns
1 K
2 K3 K
R
4 K
2003-08-20A 26/33

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]