GENERAL DESCRIPTION
The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven blocks (with top/bottom configuration), including one 16K Byte Boot Block, two 8K Byte Parameter blocks, and four main blocks (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10µs. The EN29F002 / EN29F002N features 5.0V voltage read and write operation. The access times is as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES
• 5.0V ± 10% for both read/write operation
• Read Access Time
   - 45ns, 55ns, 70ns, and 90ns
• Fast Read Access Time
   - 70ns with Cload = 100pF
   - 45ns, 55ns with Cload = 30pF
• Block Architecture:
   One 16K byte Boot Block, Two 8K byte
   Parameter Blocks, one 32K byte and three
   64K byte main Blocks
• Boot Block Top/Bottom Programming Architecture
• High performance program/erase speed
   - Byte program time: 10µs typical
   - Block erase time: 500ms typical
   - Chip erase time: 3.5s typical
• Low Standby Current
   - 1µA CMOS standby current-typical
   - 1mA TTL standby current
• Low Power Active Current
   - 30mA active read current
   - 30mA program/erase current
• JEDEC Standard program and erase commands
• JEDEC standard DATA polling and toggle bits feature
• Hardware RESET Pin (n/a for EN29F002N)
• Single Block and Chip Erase
• Block Protection / Temporary Block Unprotect (RESET = Vpp)
• Block Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
   Read and program another block during Erase Suspend Mode
• 0.4 µm double-metal double-poly triple-well CMOS Flash Technology
• Latch-Up ≥ 200mA
• Low Vcc write inhibit < 3.2V
• 100K endurance cycle
• Package Options
   - 32-pin PDIP
   - 32-pin PLCC
   - 32-pin TSOP (Type 1)
• Commercial and Industrial Temperature Ranges