CP763V 데이터시트 - Central Semiconductor
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CP763V
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Central Semiconductor
PROCESS DETAILS
Die Size 48.8 x 48.8 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 7.9 x 7.9 MILS
Emitter Bonding Pad Area 9.1 x 18.1 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å
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제조사
Small Signal Transistor PNP - High Current Transistor Chip ( Rev : 2010 )
Central Semiconductor
Small Signal Transistors PNP - High Current Transistor Chip ( Rev : 2005 )
Central Semiconductor
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