CP219 데이터시트 - Central Semiconductor
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CP219
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 82 x 82 MILS
Die Thickness 11 MILS
Base Bonding Pad Area 13.2 x 19.7 MILS
Emitter Bonding Pad Area 13.2 x 21.2 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
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제조사
Small Signal Transistor NPN - High Current Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistor NPN - High Current Transistor Chip ( Rev : 2002 )
Central Semiconductor
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