CP303X 데이터시트 - Central Semiconductor
부품명
CP303X
Other PDF
no available.
PDF
page
2 Pages
File Size
727.7 kB
제조사
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 22 x 22 MILS
Die Thickness 5.9 MILS
Base Bonding Pad Area 3.7 x 3.7 MILS
Emitter Bonding Pad Area 4.2 x 4.2 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au-As - 13,000Å
부품명
상세내역
PDF
제조사
Small Signal Transistor NPN - High Current Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistor NPN - High Current Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistors NPN - High Current Transistor Chip ( Rev : 2005 )
Central Semiconductor
Share Link: