260N3LLH6 데이터시트 - STMicroelectronics
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260N3LLH6
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15 Pages
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908.6 kB
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STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
FEATUREs
• Very low on-resistance RDS(on)
• Very low gate charge
• High avalanche ruggedness
APPLICATIONs
• Switching applications
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제조사
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