260N3LLH6 데이터 시트보기 (PDF) - STMicroelectronics

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260N3LLH6

N-channel 30 V, 0.0011 Ω typ., 260 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package

STMicroelectronics 

STL260N3LLH6

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage

VGS

ID(1)

ID (1)

IDM(1),(3)

ID(2)

ID (2)

IDM(2),(3)

PTOT (1)

PTOT (2)

EAS(4)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Drain current (continuous) at Tpcb = 25 °C

Drain current (continuous) at Tpcb=100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Total dissipation at Tpcb = 25 °C

Single pulse avalanche energy

Tj

Operating junction temperature

Tstg

Storage temperature

1. The value is rated according to Rthj-c.

2. The value is rated according to Rthj-pcb.

3. Pulse width limited by safe operating area.

4. Starting TJ =25°C, ID =35°

Value

30

± 20

260

190

1040

45

32

180

166

4.8

900

-55 to 175

Unit

V

V

A

A

A

A

A

A

W

W

mJ

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case

Rthj-pcb (1) Thermal resistance junction-pcb

1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.

Value

0.9

31.3

Unit

°C/W

°C/W

DocID026659 Rev 2

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