260N3LLH6 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

일치하는 목록

260N3LLH6

N-channel 30 V, 0.0011 Ω typ., 260 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package

STMicroelectronics 

STL260N3LLH6

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

VGS=0, ISD = 45 A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 45 A,

di/dt = 100 A/µs,

VDD=25 V

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration=300µs, duty cycle 1.5%.

Min. Typ. Max. Unit

-

45 A

-

180 A

-

1.1 V

- 37.2

ns

-

36

nC

- 1.9

A

DocID026659 Rev 2

5/15

15

Share Link: