STL160N3LLH6 데이터시트 - STMicroelectronics
부품명
STL160N3LLH6
Other PDF
no available.
PDF
page
16 Pages
File Size
753.3 kB
제조사
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
FEATUREs
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
APPLICATIONs
■ Switching applications
부품명
상세내역
PDF
제조사
N-channel 30 V, 0.0011 Ω typ., 260 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package
STMicroelectronics
N-channel 30 V, 0.0014 Ω typ., 35 A STripFET™ V Power MOSFET in a PowerFLAT™ 5x6 package ( Rev : 2013 )
STMicroelectronics
N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™ Power MOSFET in PowerFLAT™ 5x6 package
STMicroelectronics
N-channel 30 V, 0.0063 Ω, 17 A PowerFLAT™ (5x6) STripFET™ V Power MOSFET
STMicroelectronics
N-channel 30 V, 0.0014 Ω, 35 A - PowerFLAT™ (6x5) STripFET™ V Power MOSFET ( Rev : 2008_09 )
STMicroelectronics
N-channel 30 V - 0.0014 Ω - 35 A - PowerFLAT™ (6x5) STripFET™ V Power MOSFET ( Rev : 2008_04 )
STMicroelectronics
N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT™ (6x5) STripFET™ V Power MOSFET
STMicroelectronics
Share Link: