STTH312(2015) 데이터 시트보기 (PDF) - STMicroelectronics

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STTH312
(Rev.:2015)

Ultrafast recovery - 1200 V diode

STMicroelectronics 

STTH312

Characteristics

Figure 11. Junction capacitance versus reverse

voltage applied (typical values)

Figure 12. Thermal resistance junction to

ambient versus copper surface under tab

C(pF)

100

F=1MHz

VOSC=30mVRMS

Tj=25°C

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Obsolete Product(s) - Obsolete Product(s 1

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DocID12153 Rev 2

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