STTH312(2015) 데이터 시트보기 (PDF) - STMicroelectronics
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STTH312 Datasheet PDF : 9 Pages
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Characteristics
STTH312
Figure 5. Reverse recovery time versus dIF/dt
(typical values)
trr(ns)
400
350
VR=600V
Tj=125°C
300
IF=2 x IF(AV)
250
200
IF=IF(AV)
IF=0.5 x IF(AV)
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
1200
Qrr(nC)
VR=600V
Tj=125°C
1000
IF=2 x IF(AV)
800
600
IF=IF(AV)
IF=0.5 x IF(AV)
150
400
100
50
) 0
t(s 0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
200
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
uc Figure 7. Softness factor versus dIF/dt
d (typical values)
ro S factor
3.5
P 3.0
IF ≤ 2xIF(AV)
VR=600V
Tj=125°C
lete 2.5
so 2.0
b 1.5
- O 1.0
t(s) 0.5
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8. Relative variations of dynamic
parameters versus junction temperature
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
S factor
trr
IRM
QRR
50
Tj(°C)
75
IF=IF(AV)
VR=600V
Reference: Tj=125°C
100
125
duc Figure 9. Transient peak forward voltage versus
ro dIF/dt (typical values)
P VFP(V)
60
te 55
IF=IF(AV)
Tj=125°C
50
le 45
o 40
s35
b30
O 25
Figure 10. Forward recovery time versus
dIF/dt (typical values)
tfr(ns)
700
600
IF=IF(AV)
VFR=1.5 x VF max.
Tj=125°C
500
400
300
20
200
15
10
5
dIF/dt(A/µs)
0
0 25 50 75 100 125 150 175 200 225 250 275 300
100
0
0
dIF/dt(A/µs)
100
200
300
400
500
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DocID12153 Rev 2
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