STTH312(2015) 데이터 시트보기 (PDF) - STMicroelectronics

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STTH312
(Rev.:2015)

Ultrafast recovery - 1200 V diode

STMicroelectronics 

Characteristics

1

Characteristics

STTH312

Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise stated)

Symbol

Parameter

Value Unit

VRRM

Repetitive peak reverse voltage

1200

V

IF(RMS)

RMS forward current

6

A

IF(AV)

Average forward current, δ = 0.5, square wave

Tc = 150° C

3

A

IFSM

Surge non repetitive forward current

Tstg

Storage temperature range

t(s) Tj

Maximum operating junction temperature

tp = 10 ms sinusoidal

35

A

-65 to + 175 °C

175

°C

roduc Symbol

P Rth(j-c) Junction to case

Table 3. Thermal resistance

Parameter

Value

3.8

Unit

°C/W

olete Table 4. Static electrical characteristics

bs Symbol

Parameter

Test conditions

Min.

- O IR(1) Reverse leakage current

uct(s) VF(2) Forward voltage drop

Prod 1. Pulse test: tp = 5 ms, δ < 2%

te 2. Pulse test: tp = 380 µs, δ < 2%

Tj = 25° C

Tj = 125° C

Tj = 25° C

Tj = 125° C

Tj = 150° C

VR = VRRM

IF = 3A

Typ.

2

1.20

1.15

Max.

10

100

2

1.70

1.65

Unit

µA

V

oleTo evaluate the conduction losses use the following equation:

Obs P = 1.4 x IF(AV) + 0.1 IF2(RMS)

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DocID12153 Rev 2

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