STTH312(2015) 데이터 시트보기 (PDF) - STMicroelectronics

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STTH312
(Rev.:2015)

Ultrafast recovery - 1200 V diode

STMicroelectronics 

STTH312

Characteristics

Symbol

Parameter

Table 5. Dynamic characteristics

Test conditions

Min. Typ. Max. Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25 °C

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25 °C

115

ns

55

80

IRM Reverse recovery current

IF = 3 A, dIF/dt = -200 A/µs,

VR = 600 V, Tj = 125 °C

9.5

14

A

S

Softness factor

) tfr

Forward recovery time

uct(s VFP Forward recovery voltage

IF = 3 A, dIF/dt = -200 A/µs,

VR = 600 V, Tj = 125 °C

IF = 3A dIF/dt = 50 A/µs

VFR = 1.5 x VFmax, Tj = 25 °C

IF = 3 A, dIF/dt = 50 A/µs,

Tj = 25 °C

2

350 ns

12

V

Prod Figure 1. Conduction losses versus average

te current

le P(W)

7

so 6

δ = 0.1 δ = 0.2

δ = 0.5

b 5

δ = 0.05

- O 4

δ=1

t(s) 3

2

cT

u 1

d IF(AV)(A)

δ=tp/T

tp

ro 0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Figure 2. Forward voltage drop versus forward

current

IFM(A)

50

45

40

Tj=150°C

(maximum values)

35

30

Tj=150°C

(typical values)

25

Tj=25°C

(maximum values)

20

15

10

5

VFM(V)

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

te P Figure 3. Relative variation of thermal

le impedance junction to case versus pulse

o duration

sZth(j-c)/Rth(j-c)

b1.0

O 0.9

Figure 4. Peak reverse recovery current versus

dIF/dt (typical values)

IRM(A)

24

22

VR=600V

Tj=125°C

20

IF=2 x IF(AV)

0.8

18

0.7

16

0.6

IF=IF(AV)

14

0.5

12

IF=0.5 x IF(AV)

0.4

0.3 Single pulse

0.2

0.1

0.0

1.E-03

1.E-02

tp(s)

1.E-01

1.E+00

10

8

6

4

2

0

0

dIF/dt(A/µs)

50 100 150 200 250 300 350 400 450 500

DocID12153 Rev 2

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