K4E641612D 데이터 시트보기 (PDF) - Samsung

부품명

상세내역

일치하는 목록

K4E641612D

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E661612D,K4E641612D

LOWER-BYTE READ - MODIFY - WRITE CYCLE

CMOS DRAM

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

A

VIL -

VIH -

W

VIL -

VIH -

OE

VIL -

DQ0 ~ DQ7

VI/OH -

VI/OL -

DQ8 ~ DQ15

VOH -

VOL -

tCRP

tRAS

tRWC

tRP

tRPC

tCRP

tRCD

tR A D

tASR tRAH

ROW

ADDR.

tASC tCAH

COLUMN

ADDRESS

tRSH

tCAS

tC S H

tA W D

tCWD

tRWD

tOEA

tRWL

tCWL

tW P

tOLZ

tCLZ

tCAC

tAA

tRAC

tOED

tOEZ

VALID

DATA-OUT

tD S tDH

VALID

DATA-IN

OPEN

Don′t care

Undefined

Share Link: