K4E641612D 데이터 시트보기 (PDF) - Samsung

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K4E641612D

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E661612D,K4E641612D

WORD READ - MODIFY - WRITE CYCLE

CMOS DRAM

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

V IH -

LCAS

V IL -

V IH -

A

V IL -

V IH -

W

V IL -

VIH -

OE

V IL -

DQ0 ~ DQ7

V I/OH -

V I/OL -

DQ8 ~ DQ15

V I/OH -

V I/OL -

tRWC

tRAS

tRP

tCRP

tRCD

tRSH

tCAS

tCRP

tRCD

t RAD

tASR tRAH

ROW

ADDR.

tASC t CAH

COLUMN

ADDRESS

tRSH

tCAS

tCSH

tA W D

tC W D

tRWD

tO E A

tR W L

tCWL

tW P

tOLZ

tCLZ

tC A C

tAA

tRAC

tOLZ

tCLZ

tCAC

tA A

tR A C

tO E D

tOEZ

VALID

DATA-OUT

tO E D

tOEZ

VALID

DATA-OUT

tD S

tD H

VALID

DATA-IN

tD S

tD H

VALID

DATA-IN

D o n ′t c a r e

Undefined

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