K4E641612D 데이터 시트보기 (PDF) - Samsung

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K4E641612D

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E661612D,K4E641612D

WORD WRITE CYCLE ( EARLY WRITE )

NOTE : DOUT = OPEN

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

V IH -

LCAS

V IL -

V IH -

A

V IL -

V IH -

W

V IL -

V IH -

OE

V IL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

V IH -

V IL -

tRAS

tRC

tCRP

tRCD

tC S H

tR S H

tC A S

tCRP

tRCD

tASR

tR A D

tRAH

tASC

ROW

ADDRESS

tC S H

tR S H

tC A S

tC A H

COLUMN

ADDRESS

tR A L

tW C S

tWCH

tW P

tD S

t DH

DATA-IN

tD S

t DH

DATA-IN

CMOS DRAM

tR P

tC R P

tC R P

D o n ′t care

Undefined

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