STF25N10F7 데이터시트 - STMicroelectronics
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STF25N10F7
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21 Pages
File Size
1.2 MB
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STMicroelectronics
Description
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages.
FEATUREs
• Ultra low on-resistance
• 100% avalanche tested
APPLICATIONs
• Switching applications
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제조사
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