STF25N10F7 데이터 시트보기 (PDF) - STMicroelectronics

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STF25N10F7

N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages

STMicroelectronics 

STD25N10F7, STF25N10F7, STP25N10F7

1

Electrical ratings

Electrical ratings

Symbol

Table 2. Absolute maximum ratings

Parameter

DPAK

Value

TO-220

Unit

TO-220FP

VDS Drain-source voltage

VGS Gate-source voltage

(1) Drain current (continuous) at

ID

TC = 25 °C

(1)

ID

(2)

IDM

(1)

PTOT

Drain current (continuous) at

TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

VISO

Insulation withstand voltage (RMS)

from all three leads to external heat

sink (t = 1 s; TC = 25 °C)

TJ Operating junction temperature

Tstg Storage temperature

1. This value is rated according to Rthj-c.

2. Pulse width limited by safe operating area.

100

V

± 20

V

25

25

19

A

18

18

13.5

A

100

100

40

50

76

A

25

W

-

2500

V

°C

-55 to 175

°C

Symbol

Table 3. Thermal resistance

Parameter

Value

Unit

DPAK TO-220FP TO-220

Rthj-case

Rthj-amb

Rthj-pcb

Thermal resistance junction-case

Thermal resistance junction-ambient

Thermal resistance junction-pcb

3.75

50

6

3

62.5

°C/W

°C/W

°C/W

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