STF25N10F7 데이터 시트보기 (PDF) - STMicroelectronics

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STF25N10F7

N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages

STMicroelectronics 

Electrical characteristics

STD25N10F7, STF25N10F7, STP25N10F7

Figure 14. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2

ID=12.5A

AM16014v1

Figure 15. Normalized BVDSS vs temperature

VDS

(norm)

1.04

ID=250µA

AM16015v1

1.5

1.02

1

1

0.5

0

-55 -30 -5 20 45 70 95 120 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

VSD

AM16016v1

(V)

1.1

TJ=-50°C

1

TJ=25°C

0.9

TJ=150°C

0.8

0.7

0.6

0 5 10 15 20 25 ISD(A)

0.98

0.96

-55 -30 -5 20 45 70 95 120 TJ(°C)

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