datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
HOME  >>>  Silicon Storage Technology  >>> SST36VF1601G PDF

SST36VF1601G 데이터시트 - Silicon Storage Technology

SST36VF1601G image

부품명
SST36VF1601G

Other PDF
  no available.

PDF
DOWNLOAD     

page
36 Pages

File Size
901.9 kB

제조사
SST
Silicon Storage Technology SST

PRODUCT DESCRIPTION
The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.
   
FEATURES:
• Organized as 1M x16 or 2M x8
• Dual Bank Architecture for Concurrent
    Read/Write Operation
    – 16 Mbit Bottom Sector Protection
    - SST36VF1601G: 4 Mbit + 12 Mbit
    – 16 Mbit Top Sector Protection
    - SST36VF1602G: 12 Mbit + 4 Mbit
• Single 2.7-3.6V for Read and Write Operations
• Superior Reliability
    – Endurance: 100,000 cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 6 mA typical
    – Standby Current: 4 µA typical
    – Auto Low Power Mode: 4 µA typical
• Hardware Sector Protection/WP# Input Pin
    – Protects the 4 outermost sectors (8 KWord)
        in the smaller bank by driving WP# low and
        unprotects by driving WP# high
• Hardware Reset Pin (RST#)
    – Resets the internal state machine to reading
        array data
• Byte# Pin
    – Selects 8-bit or 16-bit mode
• Sector-Erase Capability
    – Uniform 2 KWord sectors
• Chip-Erase Capability
• Block-Erase Capability
    – Uniform 32 KWord blocks
• Erase-Suspend / Erase-Resume Capabilities
• Security ID Feature
    – SST: 128 bits
    – User: 256 Byte
• Fast Read Access Time
    – 70 ns
• Latched Address and Data
• Fast Erase and Program (typical):
    – Sector-Erase Time: 18 ms
    – Block-Erase Time: 18 ms
    – Chip-Erase Time: 35 ms
    – Program Time: 7 µs
• Automatic Write Timing
    – Internal VPP Generation
• End-of-Write Detection
    – Toggle Bit
    – Data# Polling
    – Ready/Busy# pin
• CMOS I/O Compatibility
• Conforms to Common Flash Memory Interface (CFI)
• JEDEC Standards
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 48-ball TFBGA (6mm x 8mm)
    – 48-lead TSOP (12mm x 20mm)
    – 56-ball LFBGA (8mm x 10mm)
• All non-Pb (lead-free) devices are RoHS compliant
   

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

부품명
상세내역
PDF
제조사
16 Mbit (x8/x16) Concurrent SuperFlash
Silicon Storage Technology
16 Mbit Concurrent SuperFlash ( Rev : 2001 )
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory
Silicon Storage Technology
16 Megabit Concurrent SuperFlash
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
Silicon Storage Technology
4 Mbit (512K x8) SuperFlash EEPROM
Silicon Storage Technology
4 Mbit (512K x8) SuperFlash EEPROM ( Rev : 2003 )
Silicon Storage Technology

Share Link: GO URL

EnglishEnglish Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]