datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
HOME  >>>  Silicon Storage Technology  >>> SST36VF1601 PDF

SST36VF1601 데이터시트 - Silicon Storage Technology

SST36VF1601 image

부품명
SST36VF1601

Other PDF
  2001  

PDF
DOWNLOAD     

page
26 Pages

File Size
261 kB

제조사
SST
Silicon Storage Technology SST

PRODUCT DESCRIPTION
The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST36VF1601/ 1602 write (Program or Erase) with a 2.7-3.6V power supply. The SST36VF1601/1602 devices conform to JEDEC standard pinouts for x16 memories.
   
FEATURES:
• Organized as 1M x16
• Dual-Bank Architecture for Concurrent
    Read/Write Operation
    – 16 Mbit Bottom Sector Protection
    - SST36VF1601: 12 Mbit + 4 Mbit
    – 16 Mbit Top Sector Protection
    - SST36VF1602: 4 Mbit + 12 Mbit
• Single 2.7-3.6V Read and Write Operations
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 25 mA (typical)
    – Standby Current: 4 µA (typical)
    – Auto Low Power Mode: 4 µA (typical)
• Hardware Sector Protection/WP# Input Pin
    – Protects 4 outer most sectors (4 KWord) in the
        larger bank by driving WP# low and unprotects
        by driving WP# high
• Hardware Reset Pin (RESET#)
    – Resets the internal state machine to reading
        data array
• Sector-Erase Capability
    – Uniform 1 KWord sectors
• Block-Erase Capability
    – Uniform 32 KWord blocks
• Read Access Time
    – 70 and 90 ns
• Latched Address and Data
• Fast Erase and Word-Program:
    – Sector-Erase Time: 18 ms (typical)
    – Block-Erase Time: 18 ms (typical)
    – Chip-Erase Time: 70 ms (typical)
    – Word-Program Time: 14 µs (typical)
    – Chip Rewrite Time: 8 seconds (typical)
• Automatic Write Timing
    – Internal VPP Generation
• End-of-Write Detection
    – Toggle Bit
    – Data# Polling
    – Ready/Busy# pin
• CMOS I/O Compatibility
• Conforms to Common Flash Memory
    Interface (CFI)
• JEDEC Standards
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 48-Pin TSOP (12mm x 20mm)
    – 48-Ball TFBGA (8mm x 10mm)
   

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

부품명
상세내역
PDF
제조사
16 Mbit (x8/x16) Concurrent SuperFlash
Silicon Storage Technology
16 Mbit (x8/x16) Concurrent SuperFlash
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
Silicon Storage Technology
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
Silicon Storage Technology
UT8CR512K32 16 Megabit SRAM ( Rev : 2004 )
Aeroflex Corporation
16 Megabit FlashBank Memory
Silicon Storage Technology
16 Megabit FlashBank Memory
SANYO -> Panasonic

Share Link: GO URL

EnglishEnglish Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]