MGF0913A 데이터시트 - MITSUBISHI ELECTRIC
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MGF0913A
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MITSUBISHI ELECTRIC
DESCRIPTION
The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
High power gain
Gp=13dB(TYP.) @f=1.9GHz
High power added efficiency
nadd=48%(TYP.) @f=1.9GHz,Pin=18dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
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