L, S BAND POWER GaAs FET

DESCRIPTION
The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

FEATURES
• Class A operation
• High output power
    P1dB=41dBm(TYP) @2.3GHz
• High power gain
    GLP=11dB(TYP) @2.3GHz
• High power added efficiency
    hadd=40%(TYP) @2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid

APPLICATION
    UHF band power amplifiers