DESCRIPTION
The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

FEATURES
• High output power
   P1dB=38dBm(TYP.) @f=2.3GHz
• High power gain
   GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm
• High power added efficiency
   hadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm

APPLICATION
  For UHF Band power amplifiers