DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic package, with emitter connected to flange.

FEATURES
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very good stability of the characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

APPLICATIONS
   Common emitter class AB power amplifiers for military and professional applications at 1.65 GHz.