LXE16350X 데이터 시트보기 (PDF) - Philips Electronics

부품명

상세내역

제조사

LXE16350X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

LXE16350X

FEATURES

• Diffused emitter ballasting resistors

providing excellent current sharing

and withstanding a high VSWR

• Interdigitated structure provides

high emitter efficiency

• Gold metallization realizes very

good stability of the characteristics

and excellent lifetime

• Multicell geometry gives good

balance of dissipated power and

low thermal resistance

• Internal input and output

prematching ensures good stability

and allows an easier design of

wideband circuits.

QUICK REFERENCE DATA

Microwave performance up to Tmb = 25 °C in a common emitter class AB

amplifier.

MODE OF

f

VCE ICQ

PL1

Gpo

OPERATION (GHz) (V) (A) (W) (dB)

Zi; ZL

(Ω)

Class AB (CW) 1.65 24 0.3 ≥32 ≥9 see Figs 8 and 9

PINNING - SOT439A

PIN

DESCRIPTION

1

collector

2

base

3

emitter connected to flange

APPLICATIONS

Common emitter class AB power

amplifiers for military and

professional applications at

1.65 GHz.

DESCRIPTION

NPN silicon planar epitaxial

microwave power transistor in a

SOT439A metal ceramic package,

with emitter connected to flange.

andbook, 4 columns

1

3

2

Top view

c

b

3

e

MAM045

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1997 Feb 19

2

Share Link: