DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange.

FEATURES
• Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
• Self-aligned process entirely ion implanted
• Gold metallization ensures an optimum temperature profile with excellent performance and reliability
• Input matching cell improves input impedance and allows an easier design of wideband circuits.

APPLICATIONS
• Common emitter class-A linear power amplifiers up to 4.2 GHz.