Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
   
Features
• 6.2A and 5.4A, 600V
• rDS(ON) = 1.2Ω and 1.6Ω
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
    - TB334, “Guidelines for Soldering Surface Mount
        Components to PC Boards”