Description
These are P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

FEATUREs
• -0.6A and -07A, -80V and -100V
• rDS(ON) = 1.2Ω and 1.6Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334, "Guldelines for Soldering Surface Mount
      Components to PC Boards"