datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
HOME  >>>  Unisonic Technologies  >>> 6N60Z PDF

6N60Z 데이터시트 - Unisonic Technologies

6N60Z image

부품명
6N60Z

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
180.1 kB

제조사
UTC
Unisonic Technologies UTC

DESCRIPTION
The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

„ FEATURES
* RDS(ON) = 1.5Ω @VGS = 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

Page Link's: 1  2  3  4  5  6 

부품명
상세내역
PDF
제조사
6.2A, 600V N-CHANNEL POWER MOSFET
Unisonic Technologies
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
Intersil
6.2A, 650V N-CHANNEL POWER MOSFET
Unisonic Technologies
6.2A, 650V N-CHANNEL POWER MOSFET
Unisonic Technologies
6.2A, 650V N-CHANNEL POWER MOSFET
Unisonic Technologies
Single N-Channel, 30V, 6.2A, Power MOSFET
Will Semiconductor Ltd.
N-Channel MOSFET 250V, 6.2A, 0.55Ω
MagnaChip Semiconductor
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Harris Semiconductor
600V / N-Channel Power MOSFET
ON Semiconductor
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Intersil

Share Link: GO URL

EnglishEnglish Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]